FQD12N20, FQU12N20 دیتاشیت

FQD12N20, FQU12N20

مشخصات دیتاشیت

نام دیتاشیت FQD12N20, FQU12N20
حجم فایل 1084.665 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت FQD12N20, FQU12N20

دانلود دیتاشیت

سایر مستندات

FQD12N20TM 11 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQD12N20TM
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2.5W;55W
  • Total Gate Charge (Qg@Vgs): 23nC@10V
  • Drain Source Voltage (Vdss): 200V
  • Input Capacitance (Ciss@Vds): 910pF@25V
  • Continuous Drain Current (Id): 9A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 280mΩ@4.5A,10V
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: FQD1
  • detail: N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount D-Pak

محصولات مشابه